18752170. MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA simplified abstract (International Business Machines Corporation)

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MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

Organization Name

International Business Machines Corporation

Inventor(s)

Daniel Worledge of San Jose CA (US)

Guohan Hu of Yorktown Heights NY (US)

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA - A simplified explanation of the abstract

This abstract first appeared for US patent application 18752170 titled 'MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

Simplified Explanation:

This patent application describes a Magnetoresistive Random Access Memory (MRAM) with enhanced data retention through the use of a temperature-independent Delta in the MTJ pillar.

  • The MRAM includes Spin-Transfer Torque (STT) MRAM technology.
  • The MTJ pillar is constructed to have a temperature-independent Delta value.
  • The Delta value is calculated using the formula Delta=Eb/kt, where Eb is the activation energy, k is Boltzmann's constant, and T is the absolute temperature.
  • The application proposes a method for the activation energy (Eb) to increase with temperature, counteracting the effect of the term KT and resulting in a temperature-independent Delta.

Potential Applications:

  • Data storage in electronic devices.
  • High-speed computing applications.
  • Memory modules for IoT devices.

Problems Solved:

  • Enhanced data retention in MRAM.
  • Improved reliability in memory storage.
  • Mitigation of temperature effects on data retention.

Benefits:

  • Increased data reliability.
  • Improved performance in high-temperature environments.
  • Extended lifespan of MRAM technology.

Commercial Applications:

Potential commercial applications include:

  • Data centers.
  • Automotive electronics.
  • Aerospace technology.

Questions about MRAM technology:

1. How does the temperature-independent Delta in the MTJ pillar enhance data retention in MRAM? 2. What are the potential long-term implications of this technology in the semiconductor industry?


Original Abstract Submitted

A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term KT, resulting in a temperature independent Delta.

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