18749678. SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Takashi Kanazawa of Miyagi (JP)
SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18749678 titled 'SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS
The abstract describes a substrate support system consisting of an electrostatic chuck, an edge ring, and a base to support a substrate. The chuck has multiple regions with different functions and electrodes to apply voltage and bias power.
- Electrostatic chuck with multiple regions and electrodes
- Edge ring support on the chuck
- Application of DC voltage and bias power to electrodes
- Gas supply line for additional functionality
- Overall system designed to support and process substrates efficiently
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Flat panel display production
Problems Solved: - Ensures stable and secure substrate support - Facilitates precise processing and handling of substrates - Enhances overall efficiency and productivity in manufacturing processes
Benefits: - Improved substrate handling and processing - Enhanced control over deposition processes - Increased productivity and yield in manufacturing operations
Commercial Applications: Title: Advanced Substrate Support System for Semiconductor Manufacturing This technology can be utilized in semiconductor fabrication facilities, thin film deposition industries, and flat panel display manufacturing plants. It offers a reliable and efficient solution for substrate support and processing, leading to enhanced production capabilities and product quality.
Questions about the technology: 1. How does the electrostatic chuck contribute to substrate stability and processing efficiency? 2. What are the advantages of using an edge ring in conjunction with the chuck for substrate support?
Original Abstract Submitted
A substrate support comprises an electrostatic chuck configured to support a substrate and an edge ring and a base configured to support the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and configured to support a substrate placed on the first upper surface, a second region having a second upper surface and configured to support an edge ring placed on the second upper surface, a first electrode disposed in the first region and to which a DC voltage is applied, a second electrode disposed below the first electrode and to which a first bias power is supplied, a third electrode disposed below the second electrode and to which the first bias power is supplied and a first gas supply line disposed between the second electrode and the third electrode.