18749001. NON-VOLATILE MEMORY DEVICE simplified abstract (ROHM CO., LTD.)
Contents
NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18749001 titled 'NON-VOLATILE MEMORY DEVICE
Simplified Explanation:
The patent application describes a non-volatile memory device that includes current mirrors, resistors, MOS transistors, and a sensing portion to sense current magnitudes. The resistance value of a resistor portion changes based on the programming of a memory element.
- The non-volatile memory device includes a first current mirror, a second current mirror, resistors connected to MOS transistors, and a sensing portion.
- The resistance value of a resistor portion changes based on the programming of a memory element.
- The sensing portion detects the magnitude relationship between currents in the MOS transistors.
- The device allows for programmable resistance values in the memory element.
- The technology enables efficient sensing and control of current magnitudes in the memory device.
Potential Applications: The technology can be applied in:
- Non-volatile memory systems
- Integrated circuits
- Data storage devices
Problems Solved: The technology addresses:
- Efficient current sensing
- Programmable resistance values
- Improved memory device performance
Benefits:
- Enhanced memory device functionality
- Increased control over current magnitudes
- Improved data storage efficiency
Commercial Applications: Title: Programmable Non-Volatile Memory Device for Enhanced Data Storage This technology can be utilized in:
- Consumer electronics
- Computer hardware
- Industrial automation systems
Prior Art: Readers can explore prior art related to non-volatile memory devices, current mirrors, and programmable resistors in semiconductor technologies.
Frequently Updated Research: Stay updated on advancements in non-volatile memory technologies, current sensing techniques, and programmable resistor applications.
Questions about Non-Volatile Memory Devices: 1. How does the programming of the memory element affect the resistance value of the resistor portion? 2. What are the key advantages of using current mirrors in non-volatile memory devices?
Original Abstract Submitted
A non-volatile memory device includes: a first current mirror; a second current mirror; a first resistor portion connected to a first MOS transistor included in the first current mirror; a second resistor portion connected to a second MOS transistor included in the second current mirror; and a sensing portion configured to sense the magnitude relationship between a first current through the first MOS transistor and a second current through the second MOS transistor. The first resistor portion includes a first memory element, which is programmable, and according to whether the first memory element is programmed, the resistance value of the first resistor portion changes.
