18748862. CONTAMINANT COLLECTION ON SOI simplified abstract (Texas Instruments Incorporated)
Contents
CONTAMINANT COLLECTION ON SOI
Organization Name
Texas Instruments Incorporated
Inventor(s)
Frank John Sweeney of Rockwall TX (US)
CONTAMINANT COLLECTION ON SOI - A simplified explanation of the abstract
This abstract first appeared for US patent application 18748862 titled 'CONTAMINANT COLLECTION ON SOI
The abstract of the patent application describes an integrated circuit with an SOI substrate containing a semiconductor layer over a buried insulator layer. An electronic device within the circuit includes an NWELL region, a dielectric layer, and a polysilicon plate. Adjacent to the electronic device is a white space region with a P-type region and a first sheet resistance, while the NWELL region has a greater second sheet resistance.
- The integrated circuit features an SOI substrate with a semiconductor layer over a buried insulator layer.
- An electronic device within the circuit includes an NWELL region, a dielectric layer, and a polysilicon plate.
- A white space region adjacent to the electronic device contains a P-type region with a first sheet resistance.
- The NWELL region has a second sheet resistance that is greater than the first sheet resistance of the P-type region.
Potential Applications: - This technology could be used in the development of advanced integrated circuits for various electronic devices. - It may find applications in the semiconductor industry for improving the performance of electronic components.
Problems Solved: - The technology addresses the need for efficient and high-performance integrated circuits. - It helps in enhancing the functionality and reliability of electronic devices.
Benefits: - Improved performance and efficiency of integrated circuits. - Enhanced functionality and reliability of electronic devices.
Commercial Applications: Title: Advanced Integrated Circuits for Enhanced Electronic Devices This technology has the potential for commercial applications in the semiconductor industry, particularly in the development of high-performance electronic devices. The market implications include improved efficiency and functionality of electronic components, leading to better consumer products.
Questions about the technology: 1. How does the presence of the P-type region and NWELL region contribute to the overall performance of the integrated circuit? 2. What are the specific advantages of using an SOI substrate in this integrated circuit design?
Original Abstract Submitted
An integrated circuit includes an SOI substrate having a semiconductor layer over a buried insulator layer. An electronic device has an NWELL region in the semiconductor layer, a dielectric over the NWELL region, and a polysilicon plate over the dielectric. A white space region adjacent the electronic device includes a first P-type region in the semiconductor layer and adjacent the surface. The P-type region has a first sheet resistance and the NWELL region has a second sheet resistance that is greater than the first sheet resistance.
