18746913. DISPLAY APPARATUS simplified abstract (SAMSUNG DISPLAY CO., LTD.)
Contents
DISPLAY APPARATUS
Organization Name
Inventor(s)
Seongmin Wang of Yongin-si (KR)
Youngin Hwang of Yongin-si (KR)
DISPLAY APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746913 titled 'DISPLAY APPARATUS
Simplified Explanation:
The patent application describes a display apparatus with two types of thin-film transistors (TFTs) and shielding layers to improve performance and durability.
- The display apparatus includes a first TFT with a silicon semiconductor layer and a second TFT with an oxide semiconductor layer.
- A first shielding layer overlaps the first TFT and is positioned between a substrate and the first TFT.
- A second shielding layer overlaps the second TFT and is positioned between the substrate and the second TFT.
Key Features and Innovation:
- Utilization of two different types of TFTs (silicon and oxide semiconductor layers) for improved display performance.
- Incorporation of shielding layers to protect the TFTs and enhance durability.
Potential Applications:
The technology can be applied in various display devices such as smartphones, tablets, TVs, and monitors.
Problems Solved:
- Enhances display performance by using different semiconductor materials.
- Increases durability and longevity of the display apparatus.
Benefits:
- Improved display quality and performance.
- Enhanced durability and longevity of the display device.
Commercial Applications:
Potential commercial applications include consumer electronics, digital signage, and automotive displays, leading to improved product performance and longevity.
Questions about Display Apparatus Technology:
1. How does the use of different semiconductor materials in the TFTs impact display performance? 2. What are the specific advantages of incorporating shielding layers in the display apparatus?
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Original Abstract Submitted
A display apparatus including a first thin-film transistor (TFT) including a first semiconductor layer including a silicon semiconductor; a second TFT including a second semiconductor layer including an oxide semiconductor; a first shielding layer configured to overlap the first TFT and positioned between a substrate and the first TFT; and a second shielding layer configured to overlap the second TFT and positioned between the substrate and the second TFT.
