18746799. PROCESSES FOR DEPOSITING SIB FILMS simplified abstract (Applied Materials, Inc.)
Contents
PROCESSES FOR DEPOSITING SIB FILMS
Organization Name
Inventor(s)
Aykut Aydin of Sunnyvale CA (US)
Rui Cheng of Santa Clara CA (US)
Karthik Janakiraman of San Jose CA (US)
Abhijit Basu Mallick of Fremont CA (US)
Takehito Koshizawa of San Jose CA (US)
PROCESSES FOR DEPOSITING SIB FILMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746799 titled 'PROCESSES FOR DEPOSITING SIB FILMS
Simplified Explanation: The patent application describes a process for forming silicon- and boron-containing films for spacer-defined patterning applications. This involves depositing a conformal film on patterned features using silicon and boron-containing gases.
- Higher molecular weight silicon-containing species used in the process
- Boron-containing species also included in the process
- Conformal film deposited on patterned features
- Film contains both silicon and boron
- Suitable for spacer-defined patterning applications
Key Features and Innovation: - Use of higher molecular weight silicon-containing species - Inclusion of boron-containing species in the process - Deposition of a conformal film on patterned features - Film composition includes both silicon and boron - Specifically designed for spacer-defined patterning applications
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology - Advanced patterning techniques
Problems Solved: - Enhancing patterning precision - Improving film uniformity - Increasing process efficiency - Facilitating advanced semiconductor fabrication
Benefits: - Enhanced device performance - Improved manufacturing yield - Cost-effective patterning solutions - Compatibility with existing processes
Commercial Applications: Advanced Patterning Techniques for Semiconductor Manufacturing
Prior Art: Further research can be conducted in the field of silicon and boron-containing films for spacer-defined patterning applications to identify relevant prior art.
Frequently Updated Research: Ongoing research in semiconductor manufacturing processes and materials may provide additional insights into the development and optimization of silicon- and boron-containing films for advanced patterning applications.
Questions about Silicon and Boron-Containing Films for Spacer-Defined Patterning: 1. What are the key advantages of using silicon and boron-containing films in spacer-defined patterning applications? 2. How does the inclusion of higher molecular weight silicon-containing species contribute to the deposition process?
Original Abstract Submitted
Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.
