18741721. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
Contents
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
ALEXANDER Kalnitsky of SAN FRANCISCO CA (US)
HARRY-HAK-LAY Chuang of HSINCHU COUNTY (TW)
SHENG-HAUNG Huang of HSINCHU CITY (TW)
TIEN-WEI Chiang of TAIPEI CITY (TW)
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18741721 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
The present disclosure describes a method for fabricating a semiconductor device, involving the formation of a magnetic tunneling junction (MTJ) on a substrate, followed by the creation of dielectric layers and metal interconnections to connect the MTJ.
- Formation of a magnetic tunneling junction (MTJ) on a substrate
- Creation of a first dielectric layer around the MTJ
- Formation of a first metal interconnection adjacent to the MTJ
- Formation of a second dielectric layer over the first dielectric layer
- Removal of the second dielectric layer to create an opening
- Formation of a metal line in the opening to connect the MTJ and the first metal interconnection
Potential Applications: - Memory devices - Magnetic sensors - Spintronic devices
Problems Solved: - Improved performance of semiconductor devices - Enhanced connectivity between components
Benefits: - Increased efficiency - Enhanced reliability - Cost-effective fabrication process
Commercial Applications: Title: Semiconductor Device Fabrication Method for Improved Connectivity This technology can be applied in the production of memory devices, magnetic sensors, and other spintronic devices, enhancing their performance and reliability.
Questions about Semiconductor Device Fabrication Method: 1. How does the formation of a magnetic tunneling junction (MTJ) contribute to the functionality of the semiconductor device? 2. What are the advantages of using dielectric layers and metal interconnections in the fabrication process?
Original Abstract Submitted
The present disclosure provides a method for fabricating a semiconductor device. The method includes the operations below. A magnetic tunneling junction (MTJ) is formed on a substrate. A first dielectric layer is formed around the MTJ. A first metal interconnection is formed adjacent to the MTJ. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is removed to form an opening. A metal line is formed in the opening to electrically connect the MTJ and the first metal interconnection.
