18735416. WAFER PRODUCTION METHOD simplified abstract (DENSO CORPORATION)
Contents
WAFER PRODUCTION METHOD
Organization Name
Inventor(s)
Koichiro Yasuda of Kariya-city (JP)
Ryota Takagi of Kariya-city (JP)
Tomoki Kawazu of Kariya-city (JP)
Sodai Nomura of Kariya-city (JP)
Hideaki Shirai of Kariya-city (JP)
Bahman Soltani of Kariya-city (JP)
Shunsuke Sobajima of Kariya-city (JP)
WAFER PRODUCTION METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18735416 titled 'WAFER PRODUCTION METHOD
Simplified Explanation: This patent application describes a method for producing wafers from ingots with a c-axis inclined in an off-angle direction.
- Emit a laser beam to create a separation layer in the ingot.
- Apply a physical load to remove a wafer precursor from the ingot.
- Planarize the removed object to form a wafer.
Key Features and Innovation:
- Laser beam used to create a separation layer in the ingot.
- Physical load applied to remove wafer precursor.
- Planarization process to form the wafer.
Potential Applications: This technology can be used in semiconductor manufacturing, solar cell production, and other industries requiring high-quality wafers.
Problems Solved: This method streamlines the wafer production process, improving efficiency and yield.
Benefits:
- Higher quality wafers produced.
- Increased efficiency in wafer production.
- Cost savings in manufacturing processes.
Commercial Applications: The technology can be applied in semiconductor fabrication plants, solar panel manufacturing facilities, and other industries requiring precision wafers.
Prior Art: Readers can explore prior art related to laser processing of materials and wafer production methods.
Frequently Updated Research: Stay informed about advancements in laser technology and semiconductor manufacturing processes.
Questions about Wafer Production: 1. How does the laser beam create a separation layer in the ingot? 2. What are the potential applications of this wafer production method?
Original Abstract Submitted
A wafer production method for producing a wafer from an ingot oriented to have a c-axis inclined in an off-angle direction at an off-angle more than zero degree From a central axis includes steps of emitting a laser beam to a top surface that is one of end surfaces of the ingot opposed to each other in height direction thereof to form a separation layer at a depth from the top surface of the ingot which corresponds to a thickness of the wafer, applying a physical load in a single direction to a first end that is one of ends of the ingot which are opposed to each other in an off-angle direction to remove a wafer precursor from the ingot at the separation layer, and planarizing a major surface of a removed object derived by separating the wafer precursor from the ingot at the separation layer, thereby forming a wafer. The ingot has a given degree of transmittance to the laser beam. The wafer precursor is created by a portion of the ingot between the top surface of the ingot and the separation layer.
