18734477. BIPOLAR TRANSISTOR AND SEMICONDUCTOR simplified abstract (Murata Manufacturing Co., Ltd.)
Contents
BIPOLAR TRANSISTOR AND SEMICONDUCTOR
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Kenji Sasaki of Nagaokakyo-shi (JP)
Koji Inoue of Nagaokakyo-shi (JP)
Shinnosuke Takahashi of Nagaokakyo-shi (JP)
Satoshi Goto of Nagaokakyo-shi (JP)
Masao Kondo of Nagaokakyo-shi (JP)
BIPOLAR TRANSISTOR AND SEMICONDUCTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18734477 titled 'BIPOLAR TRANSISTOR AND SEMICONDUCTOR
The patent application describes a mesa structure with a collector layer, base layer, and emitter layer laminated on a substrate. An emitter electrode connected to the emitter layer and a base electrode connected to the base layer are placed on the mesa structure. A collector electrode surrounds the mesa structure and is connected to the collector layer. The emitter electrode consists of a first part and a second part, with the base electrode surrounding the first part and the second part surrounding the base electrode.
- Mesa structure with collector, base, and emitter layers
- Emitter and base electrodes connected to respective layers
- Collector electrode surrounding the mesa structure
- Specific layout of emitter and base electrodes in plan view
- Laminated structure on a substrate
Potential Applications: - Semiconductor devices - Solar cells - Photodetectors
Problems Solved: - Efficient electrical connections in semiconductor devices - Enhanced performance of solar cells - Improved sensitivity in photodetectors
Benefits: - Increased efficiency in electronic devices - Enhanced performance of solar energy systems - Improved detection capabilities in sensors
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Energy Efficiency This technology can be used in the development of high-performance electronic devices, solar panels, and sensors for various industries such as electronics, renewable energy, and telecommunications.
Questions about the technology: 1. How does the specific layout of the electrodes contribute to the performance of the mesa structure? 2. What are the potential challenges in manufacturing and scaling up this technology for commercial applications?
Original Abstract Submitted
A mesa structure including a collector layer, a base layer, and an emitter layer laminated on a substrate is formed. An emitter electrode electrically connected to the emitter layer is disposed on the mesa structure. Moreover, a base electrode electrically connected to the base layer is disposed on the mesa structure. A collector electrode is disposed in such a manner as to surround the mesa structure in plan view, and the collector electrode is electrically connected to the collector layer. The emitter electrode includes a first part and a second part. In plan view, the base electrode surrounds the first part of the emitter electrode, and the second part of the emitter electrode surrounds the base electrode.
