18732793. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
Hanae Ishihara of Yokkaichi Mie (JP)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18732793 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation: The patent application describes a device with semiconductor pillars and insulator columns arranged in different regions, connected by conductive layers.
- The device has a first region with semiconductor pillars passing through conductive layers, a second region with similar pillars, and a third region between them with insulator columns passing through conductive layers.
- The third region includes a fourth region where a conductive layer connects the first and second regions, and a fifth region where a conductive layer is connected to a contact plug.
- Insulator columns in the fourth region have a smaller diameter than those in the fifth region.
Key Features and Innovation:
- Integration of semiconductor pillars, insulator columns, and conductive layers in a device structure.
- Varying diameters of insulator columns in different regions for specific electrical connections.
- Efficient layout design for improved electrical connectivity.
Potential Applications:
- Semiconductor devices
- Integrated circuits
- Electrical connectors
Problems Solved:
- Efficient electrical connectivity in complex device structures
- Precise control of electrical pathways
- Optimization of space in semiconductor devices
Benefits:
- Enhanced electrical performance
- Compact device design
- Improved reliability
Commercial Applications: Potential commercial applications include:
- Semiconductor manufacturing
- Electronics industry
- Research and development in semiconductor technology
Questions about the Technology: 1. How does the varying diameter of insulator columns impact the overall performance of the device? 2. What are the specific advantages of using semiconductor pillars in this device design?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device structures and integration techniques for improved performance and efficiency.
Original Abstract Submitted
A device includes a first region including first semiconductor pillars extending through first conductive layers; a second region including second semiconductor pillars extending through second conductive layers; and a third region disposed between the first region and the second region and including insulator columns extending through third conductive layers. The third region includes a fourth region and a fifth region. In the fourth region, one third conductive layer electrically connects one first conductive layer and one second conductive layer to each other, and in the fifth region, one third conductive layer is connected to a contact plug. A first diameter of a first subset of the insulator columns provided in the fourth region is smaller than a second diameter of a second subset of the insulator columns provided in the fifth region.
