18732725. RRAM BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
RRAM BOTTOM ELECTRODE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Fu-Chen Chang of New Taipei City (TW)
Wen-Ting Chu of Kaohsiung City (TW)
RRAM BOTTOM ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18732725 titled 'RRAM BOTTOM ELECTRODE
Simplified Explanation: The patent application describes an integrated circuit device with a novel RRAM cell structure that improves performance and reliability.
- The RRAM cell includes a top electrode, RRAM dielectric layer, and a bottom electrode with reduced oxide presence on its surface.
- The bottom electrode has a higher density near the surface compared to the bulk region, enhancing cell performance.
- The surface roughness is controlled to be 2 nm or less through a specific process involving polishing, etching, and ion bombardment.
- The resulting array of RRAM cells shows superior performance in terms of resistance states distribution and separation.
Key Features and Innovation:
- Reduced oxide presence on the bottom electrode surface
- Higher density near the surface of the bottom electrode
- Controlled surface roughness for improved performance
- Specific process involving polishing, etching, and ion bombardment
- Superior performance in resistance states distribution and separation
Potential Applications: This technology can be applied in:
- Memory storage devices
- Neuromorphic computing
- Artificial intelligence hardware accelerators
Problems Solved:
- Improved performance and reliability of RRAM cells
- Enhanced resistance states distribution and separation
- Controlled surface roughness for better device operation
Benefits:
- Increased efficiency and reliability of integrated circuit devices
- Enhanced memory storage capabilities
- Improved performance in artificial intelligence applications
Commercial Applications: Title: Advanced RRAM Cell Technology for Enhanced Memory Storage This technology can be utilized in:
- Semiconductor manufacturing industry
- Memory chip production companies
- Research institutions focusing on advanced computing technologies
Prior Art: Further research can be conducted on RRAM cell structures, surface treatments, and memory device optimization to explore related prior art.
Frequently Updated Research: Stay updated on advancements in RRAM technology, memory storage devices, and semiconductor manufacturing processes for potential improvements in integrated circuit devices.
Questions about RRAM Cell Technology: 1. What are the key advantages of using RRAM cells in memory storage devices? 2. How does the controlled surface roughness of the bottom electrode impact the performance of RRAM cells?
Original Abstract Submitted
An integrated circuit device has an RRAM cell that includes a top electrode, an RRAM dielectric layer, and a bottom electrode having a surface that interfaces with the RRAM dielectric layer. Oxides of the bottom electrode are substantially absent from the bottom electrode surface. The bottom electrode has a higher density in a zone adjacent the surface as compared to a bulk region of the bottom electrode. The surface has a roughness Ra of 2 nm or less. A process for forming the surface includes chemical mechanical polishing followed by hydrofluoric acid etching followed by argon ion bombardment. An array of RRAM cells formed by this process is superior in terms of narrow distribution and high separation between low and high resistance states.
