18731181. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Noriaki Noji of Nagano-city (JP)
Naoko Kodama of Matsumoto-city (JP)
Kazuhiro Kitahara of Matsumoto-city (JP)
Tatsuya Hashimoto of Azumino-city (JP)
Ryota Kataoka of Matsumoto-city (JP)
Shunya Hayashida of Matsumoto-city (JP)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18731181 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The abstract describes a method of manufacturing a semiconductor device involving the formation of a surface structure with a MOS structure in a semiconductor substrate, followed by the formation of an interlayer insulating film partially covering the surface structure. An aluminum alloy film is then formed in contact with the surface structure, covering the entire area where the surface structure, including the interlayer insulating film, is located. A resist film is applied on the surface of the aluminum alloy film, with a thickness that covers the surface of the aluminum alloy while exposing a convex-shaped defect on the film's surface. The aluminum alloy film is patterned using the resist film as a mask, and then the resist film is removed.
- Formation of a surface structure with a MOS structure in a semiconductor substrate
- Partial coverage of the surface structure with an interlayer insulating film
- Formation of an aluminum alloy film covering the entire area of the surface structure
- Application of a resist film to expose a convex-shaped defect on the aluminum alloy film
- Patterning of the aluminum alloy film using the resist film as a mask
- Removal of the resist film
Potential Applications: - Semiconductor manufacturing - Electronics industry
Problems Solved: - Efficient manufacturing of semiconductor devices - Improved control over the patterning process
Benefits: - Enhanced precision in semiconductor device fabrication - Cost-effective manufacturing process
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Process This technology can be utilized in the production of various semiconductor devices, leading to improved performance and reliability in electronic products. The market implications include increased efficiency in semiconductor manufacturing processes and the potential for developing cutting-edge electronic devices.
Questions about Semiconductor Device Manufacturing Process: 1. How does the method described in the abstract improve the manufacturing process of semiconductor devices? 2. What are the key advantages of using an aluminum alloy film in semiconductor device fabrication?
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating partially covering the surface structure; forming an aluminum alloy film in contact with the surface structure and covering an entire area where the surface structure, including the interlayer insulating film, is formed; forming a resist film on the surface of the aluminum alloy film so as to have a thickness that covers the surface of the aluminum alloy while exposing a convex-shaped defect formed at the surface of the aluminum alloy film; patterning the aluminum alloy film using the resist film as a mask; and removing the resist film.
