18728625. SILICON CARBIDE SEMICONDUCTOR DEVICE (Sumitomo Electric Industries, Ltd.)
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
Sumitomo Electric Industries, Ltd.
Inventor(s)
SILICON CARBIDE SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18728625 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
Original Abstract Submitted
A silicon carbide semiconductor device includes an n-type drift region, a p-type body region, an n-type source region, a p-type contact region, a gate trench extending in a first direction, a gate insulating film, a gate electrode, a source electrode, an interlayer insulating film, a p-type electric field mitigation region, and a p-type connection region connecting the contact region and the electric field mitigation region. The electric field mitigation region includes a first region having a first dimension in a second direction perpendicular to the first direction, and a second region connected to the first region in the first direction and having a second dimension in the second direction smaller than the first dimension. The contact region includes a third region exposed via a contact hole provided in the interlayer insulating film and connected to the source electrode.