18701479. STRIP WITH BEVEL CLEANING (LAM RESEARCH CORPORATION)

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STRIP WITH BEVEL CLEANING

Organization Name

LAM RESEARCH CORPORATION

Inventor(s)

Leonid Belau of Pleasanton CA (US)

Eric Hudson of Berkeley CA (US)

STRIP WITH BEVEL CLEANING

This abstract first appeared for US patent application 18701479 titled 'STRIP WITH BEVEL CLEANING



Original Abstract Submitted

A method for stripping a polymer containing sidewall film from etch features and a polymer containing deposition layer from a backside of a bevel of a wafer with a stack with at least one silicon nitride containing layer is provided. A plasma is formed from a stripping gas, the stripping gas comprising a hydrogen (H) containing gas and at least one of CO, CO, NO, NO, or NO, wherein the plasma creates radicals from the stripping gas. The wafer is exposed to the radicals, wherein the radicals remove the polymer containing sidewall film and the polymer containing deposition layer.