18686604. Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device simplified abstract (BOE Technology Group Co., Ltd.)
Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device
Organization Name
BOE Technology Group Co., Ltd.
Inventor(s)
Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18686604 titled 'Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device
The abstract describes a patent application for a thin film transistor with a semiconductor layer made of a metal oxide semiconductor material.
- The thin film transistor includes a substrate and a semiconductor layer.
- The semiconductor layer has a channel region with crystals of metal oxide semiconductor.
- The crystals are formed at least in the channel region of the semiconductor layer.
Potential Applications:
- Display technology
- Integrated circuits
- Electronic devices
Problems Solved:
- Improved performance of thin film transistors
- Enhanced conductivity and efficiency
Benefits:
- Higher quality display screens
- Faster and more reliable electronic devices
Commercial Applications:
- Consumer electronics industry
- Semiconductor manufacturing companies
Questions about Thin Film Transistors: 1. How do thin film transistors differ from traditional transistors? 2. What are the advantages of using metal oxide semiconductor materials in thin film transistors?
Frequently Updated Research:
- Ongoing studies on optimizing the performance of metal oxide semiconductor thin film transistors.
Original Abstract Submitted
A thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. The semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. The semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.
