18681214. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
Contents
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor(s)
SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18681214 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
The abstract describes a silicon carbide semiconductor device with a first passivation film on gate and source pads, and a second passivation film on the first passivation film. The first passivation film includes a first interlayer insulation, first and second openings exposing the gate and source pads, and first and second plating films inside the openings. The second passivation film covers the first passivation film and includes a second interlayer insulation, third and fourth openings exposing the plating films, and third and fourth edges.
- The silicon carbide semiconductor device features dual passivation films for enhanced protection.
- The first passivation film includes an interlayer insulation and openings for gate and source pads.
- Plating films are formed inside the openings to provide additional functionality.
- The second passivation film covers the first passivation film and includes another interlayer insulation.
- Additional openings in the second passivation film expose the plating films for further customization.
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles - Renewable energy systems
Problems Solved: - Enhanced protection for silicon carbide semiconductor devices - Improved reliability in harsh environments - Increased functionality and customization options
Benefits: - Extended device lifespan - Higher performance under extreme conditions - Greater design flexibility for specific applications
Commercial Applications: Title: "Advanced Silicon Carbide Semiconductor Devices for High-Performance Applications" This technology can be utilized in industries such as power electronics, automotive, aerospace, and renewable energy, where high-performance semiconductor devices are crucial for efficient operations.
Questions about Silicon Carbide Semiconductor Devices: 1. How does the dual passivation film design improve the reliability of silicon carbide semiconductor devices? 2. What are the key advantages of using silicon carbide semiconductor devices in high-temperature applications?
Frequently Updated Research: Researchers are constantly exploring new materials and designs to further enhance the performance and reliability of silicon carbide semiconductor devices. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
A silicon carbide semiconductor device includes a first passivation film formed on gate and source pads on a principal surface of a silicon carbide substrate, and a second passivation film formed on the first passivation film. The first passivation film includes a first interlayer insulation between the gate and source pads, a first opening exposing the gate pad and having a first edge, and a second opening exposing the source pad and having a second edge. First and second plating film are formed on the gate and source pads inside the first and second openings, respectively. The second passivation film is also formed on the first and second plating films, and includes a second interlayer insulation covering the first interlayer insulation, a third opening exposing the first plating film and having a third edge, and a fourth opening exposing the second plating film and having a fourth edge.
