18679437. MAGNETORESISTIVE RANDOM ACCESS MEMORY simplified abstract (United Microelectronics Corp.)

MAGNETORESISTIVE RANDOM ACCESS MEMORY

Organization Name

United Microelectronics Corp.

Inventor(s)

Hui-Lin Wang of Taipei City (TW)

Yu-Ping Wang of Hsinchu City (TW)

Chen-Yi Weng of New Taipei City (TW)

Chin-Yang Hsieh of Tainan City (TW)

Si-Han Tsai of Taichung City (TW)

Che-Wei Chang of Taichung City (TW)

Jing-Yin Jhang of Tainan City (TW)

MAGNETORESISTIVE RANDOM ACCESS MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18679437 titled 'MAGNETORESISTIVE RANDOM ACCESS MEMORY

The semiconductor device described in the abstract includes a substrate with a magnetic tunneling junction (MTJ) region and a logic region, a first MTJ on the MTJ region, a first metal interconnection on the logic region, and a cap layer extending from the sidewall of the first MTJ to the sidewall of the first metal interconnection. The cap layers on the MTJ region and logic region have different thicknesses.

• The semiconductor device features a unique cap layer design that extends from the MTJ region to the logic region.
• The cap layers on the MTJ region and logic region have varying thicknesses, enhancing the performance of the device.
• By incorporating different thicknesses of cap layers, the device can optimize the functionality of both the MTJ and logic regions.
• This innovation allows for improved efficiency and reliability in semiconductor devices.
• The design of the cap layer structure contributes to the overall performance and functionality of the device.

Potential Applications: - This technology can be applied in various electronic devices such as computers, smartphones, and IoT devices. - It can be used in data storage devices, sensors, and other semiconductor applications.

Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Optimizes the functionality of both the MTJ and logic regions. - Improves reliability and durability of electronic devices.

Benefits: - Increased efficiency and performance in semiconductor devices. - Enhanced reliability and durability. - Optimal functionality of both MTJ and logic regions.

Commercial Applications: Title: Advanced Semiconductor Device with Cap Layer Design This technology can be utilized in the production of high-performance electronic devices, improving their efficiency and reliability. The market implications include enhanced competitiveness in the semiconductor industry and the potential for the development of innovative electronic products.

Questions about Semiconductor Device with Cap Layer Design: 1. How does the cap layer design contribute to the performance of the semiconductor device? The cap layer design extends from the MTJ region to the logic region, optimizing the functionality of both regions and enhancing the overall performance of the device.

2. What are the potential applications of this technology in the electronics industry? This technology can be applied in various electronic devices such as computers, smartphones, and IoT devices, as well as in data storage devices and sensors.

Original Abstract Submitted

A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.