18678949. Classification of Error Rate of Data Retrieved from Memory Cells simplified abstract (Micron Technology, Inc.)
Contents
Classification of Error Rate of Data Retrieved from Memory Cells
Organization Name
Inventor(s)
Sivagnanam Parthasarathy of Carlsbad CA (US)
James Fitzpatrick of Laguna Niguel CA (US)
Patrick Robert Khayat of San Diego CA (US)
AbdelHakim S. Alhussien of San Jose CA (US)
Classification of Error Rate of Data Retrieved from Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 18678949 titled 'Classification of Error Rate of Data Retrieved from Memory Cells
The memory sub-system described in the patent application is designed to optimize read voltages for memory cells based on signal and noise characteristics, generate features to classify bit error rates, and control memory cell operations accordingly.
- Measures signal and noise characteristics of memory cells
- Determines optimized read voltages based on these characteristics
- Generates features, including compound features, from the characteristics
- Classifies bit error rates using the features
- Controls memory cell operations based on the classification
Potential Applications: - Memory devices in electronic devices - Data storage systems - Error correction in memory technologies
Problems Solved: - Improving read voltages for memory cells - Enhancing data retrieval accuracy - Optimizing memory cell operations based on characteristics
Benefits: - Increased data reliability - Improved memory performance - Enhanced error correction capabilities
Commercial Applications: Title: "Optimized Memory Read Voltage System for Enhanced Data Retrieval" This technology could be utilized in various industries such as: - Consumer electronics - Data centers - Semiconductor manufacturing
Prior Art: Researchers can explore prior patents related to memory optimization, data retrieval, and error correction in memory systems to understand the existing technology landscape.
Frequently Updated Research: Stay updated on advancements in memory optimization, data retrieval techniques, and error correction algorithms to enhance the efficiency of memory systems.
Questions about Memory Sub-System: 1. How does the memory sub-system optimize read voltages for memory cells? - The memory sub-system measures signal and noise characteristics of memory cells to determine optimized read voltages, improving data retrieval accuracy.
2. What are the potential applications of this technology beyond memory devices? - This technology could be applied in various industries such as data storage systems, error correction mechanisms, and semiconductor manufacturing processes.
Original Abstract Submitted
A memory sub-system configured to: measure a plurality of sets of signal and noise characteristics of a group of memory cells in a memory device; determine a plurality of optimized read voltages of the group of memory cells from the plurality of sets of signal and noise characteristics respectively; generate features from the plurality of sets of signal and noise characteristics, including at least one compound feature generated from the plurality of sets of signal and noise characteristics; generate, using the features, a classification of a bit error rate of data retrievable from the group of memory cells; and control an operation to read the group of memory cells based on the classification.
