18678538. Semiconductor Device simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

Semiconductor Device

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Shunpei Yamazaki of Tokyo (JP)

Kenichi Okazaki of Tochigi (JP)

Junichi Koezuka of Tochigi (JP)

Tomonori Nakayama of Atsugi (JP)

Motoki Nakashima of Atsugi (JP)

Semiconductor Device - A simplified explanation of the abstract

This abstract first appeared for US patent application 18678538 titled 'Semiconductor Device

The abstract describes a patent application for a transistor with an oxide semiconductor that aims to suppress changes in electrical characteristics and improve reliability.

• The transistor consists of an oxide semiconductor film, a first insulating film, a second insulating film, a metal oxide film, a gate electrode, and a third insulating film.
• The oxide semiconductor film includes a channel region, a source region, and a drain region containing various elements such as hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and rare gases.

Potential Applications: - This technology could be used in electronic devices such as smartphones, tablets, and computers. - It may find applications in the automotive industry for advanced driver assistance systems and electric vehicles.

Problems Solved: - The technology addresses issues related to changes in electrical characteristics and reliability in transistors. - It aims to enhance the performance and longevity of electronic devices.

Benefits: - Improved reliability and stability of transistors. - Enhanced performance of electronic devices. - Potential for increased efficiency and reduced power consumption.

Commercial Applications: Title: Advanced Transistor Technology for Enhanced Electronic Devices This technology could be utilized in the semiconductor industry for the production of high-performance transistors, leading to more reliable and efficient electronic devices. The market implications include improved consumer electronics, automotive systems, and industrial applications.

Questions about the technology: 1. How does the inclusion of various elements in the source and drain regions impact the performance of the transistor? - The presence of elements such as hydrogen, boron, carbon, and others in the source and drain regions can influence the conductivity and stability of the transistor, potentially improving its overall performance. 2. What sets this transistor technology apart from traditional semiconductor devices? - This transistor technology stands out due to its use of an oxide semiconductor film and specific elements in the source and drain regions, which contribute to enhanced reliability and performance compared to conventional transistors.

Original Abstract Submitted

In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.