18676107. JUNCTION BARRIER SCHOTTKY DIODE simplified abstract (TDK Corporation)
Contents
JUNCTION BARRIER SCHOTTKY DIODE
Organization Name
Inventor(s)
Katsumi Kawasaki of Tokyo (JP)
JUNCTION BARRIER SCHOTTKY DIODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18676107 titled 'JUNCTION BARRIER SCHOTTKY DIODE
The patent application describes a junction barrier Schottky diode with a semiconductor substrate made of gallium oxide, a drift layer also made of gallium oxide, an anode electrode in Schottky contact with the drift layer, and a cathode electrode in ohmic contact with the semiconductor substrate.
- The drift layer features a center trench filled with the anode electrode and a semiconductor material of opposite conductivity type, with the bottom surface of the trench in contact with the semiconductor material but not the anode electrode.
- A portion of the side surface of the center trench is in Schottky contact with the anode electrode.
Potential Applications: - Power electronics - High-frequency applications - Solar energy conversion
Problems Solved: - Improved efficiency in power conversion - Enhanced performance in high-frequency applications - Increased reliability in solar energy systems
Benefits: - Higher efficiency - Better performance at high frequencies - Enhanced reliability and durability
Commercial Applications: Title: "Advanced Junction Barrier Schottky Diodes for Power Electronics and Solar Energy" This technology can be utilized in power converters, solar inverters, and high-frequency electronic devices, leading to more efficient and reliable systems in various industries.
Questions about Junction Barrier Schottky Diodes: 1. How do junction barrier Schottky diodes differ from conventional Schottky diodes?
- Junction barrier Schottky diodes have an additional drift layer that enhances their performance compared to traditional Schottky diodes.
2. What are the key advantages of using gallium oxide in the semiconductor substrate of these diodes?
- Gallium oxide offers high breakdown voltage and thermal stability, making it ideal for high-power applications.
Original Abstract Submitted
Disclosed herein is a junction barrier Schottky diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a center trench filled with the anode electrode and a semiconductor material having a conductivity type opposite to that of the drift layer. A bottom surface of the center trench contacts the semiconductor material without being in contact with the anode electrode. At least a part of a side surface of the center trench is brought into Schottky contact with the anode electrode.
