18675175. CAPACITOR AND MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
CAPACITOR AND MEMORY DEVICE
Organization Name
Inventor(s)
Jaehyoung Choi of Hwaseong-si (KR)
CAPACITOR AND MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18675175 titled 'CAPACITOR AND MEMORY DEVICE
Simplified Explanation: The patent application describes a capacitor and a DRAM device with a specific dielectric layer structure that includes zirconium oxide and hafnium oxide layers, providing improved performance.
Key Features and Innovation:
- Capacitor with a dielectric layer structure of zirconium oxide and hafnium oxide layers.
- Specific crystal phases in the hafnium oxide layer for enhanced functionality.
- Sequential stacking of zirconium oxide and hafnium oxide layers for optimized performance.
Potential Applications: This technology can be applied in various electronic devices requiring capacitors with high performance dielectric layers, such as DRAM devices, integrated circuits, and memory modules.
Problems Solved: The technology addresses the need for capacitors with improved dielectric properties, offering better performance and reliability in electronic devices.
Benefits:
- Enhanced performance and reliability in electronic devices.
- Improved efficiency and functionality of capacitors.
- Potential for increased speed and storage capacity in DRAM devices.
Commercial Applications: Potential commercial applications include the manufacturing of advanced electronic devices, memory modules, and integrated circuits for various industries such as telecommunications, computing, and consumer electronics.
Questions about the Technology: 1. What are the specific advantages of using zirconium oxide and hafnium oxide layers in the dielectric structure of capacitors? 2. How does the crystal phase of the hafnium oxide layer impact the performance of the capacitor?
Original Abstract Submitted
A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.
