18674788. SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER simplified abstract (Micron Technology, Inc.)
Contents
SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER
Organization Name
Inventor(s)
Kazuyuki Morishige of Sagamihara (JP)
Tetsuya Arai of Sagamihara (JP)
SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18674788 titled 'SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER
The patent application describes an apparatus with a semiconductor substrate, gate electrodes, wiring layers, and via conductors for improved performance in electronic devices.
- Source regions and drain regions are alternately arranged in a first direction on the semiconductor substrate.
- Gate electrodes are positioned between the source and drain regions.
- The first wiring layer includes conductive patterns covering the source and drain regions, with via conductors connecting them.
- A second wiring layer above the first layer includes additional conductive patterns and via conductors for further connectivity.
- The fourth via conductors in the second wiring layer are shifted from the third via conductors in a perpendicular direction, enhancing efficiency.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can improve the performance and reliability of integrated circuits in various electronic applications.
Problems Solved: - Enhances the connectivity and efficiency of electronic devices. - Provides a more compact and reliable design for semiconductor components.
Benefits: - Improved performance and reliability of electronic devices. - Enhanced connectivity and efficiency in semiconductor manufacturing processes.
Commercial Applications: - This technology has potential commercial uses in the semiconductor industry for the development of high-performance electronic devices. - It can impact the market by offering more efficient and reliable semiconductor components.
Questions about the Technology: 1. How does the shifting of via conductors in the second wiring layer improve efficiency? 2. What are the specific advantages of using this apparatus in semiconductor manufacturing processes?
Original Abstract Submitted
Some embodiments provide an apparatus including a semiconductor substrate having source regions and regions alternately arranged in a first direction; gate electrodes between the source regions and the drain regions; a first wiring layer including first conductive patterns covering the source regions and second conductive patterns covering the drain regions; first via conductors between the first conductive patterns and the source regions; second via conductors between the second conductive patterns and the drain regions; a second wiring layer over the first wiring layer, including third conductive patterns covering the first conductive patterns and fourth conductive patterns covering the second conductive patterns; third via conductors between the third conductive patterns and the first conductive patterns; and fourth via conductors between the fourth conductive patterns and the second conductive patterns. The fourth via conductors are shifted from the third via conductors in a second direction perpendicular to the first direction.
