18674006. THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING simplified abstract (Texas Instruments Incorporated)

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THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING

Organization Name

Texas Instruments Incorporated

Inventor(s)

Benjamin Stassen Cook of Addison TX (US)

Archana Venugopal of Dallas TX (US)

Luigi Colombo of Dallas TX (US)

Robert Reid Doering of Garland TX (US)

THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18674006 titled 'THERMAL ROUTING TRENCH BY ADDITIVE PROCESSING

Simplified Explanation: The patent application describes an integrated circuit with a semiconductor substrate, a trench in the substrate containing a layer of nanoparticle material, and an interconnect region above the trench.

Key Features and Innovation:

  • Integrated circuit with nanoparticle material in a trench
  • Semiconductor substrate
  • Interconnect region above the trench

Potential Applications: The technology could be used in various electronic devices, such as smartphones, computers, and IoT devices.

Problems Solved: This technology improves the performance and efficiency of integrated circuits by utilizing nanoparticle materials in the design.

Benefits:

  • Enhanced performance of integrated circuits
  • Increased efficiency in electronic devices
  • Potential for smaller and more powerful devices

Commercial Applications: The technology could be applied in the semiconductor industry for the development of advanced electronic devices, leading to potential market growth and innovation.

Questions about Integrated Circuits: 1. How does the use of nanoparticle material in the trench improve the performance of the integrated circuit? 2. What are the potential limitations or challenges associated with integrating nanoparticle materials into semiconductor substrates?


Original Abstract Submitted

An integrated circuit includes a semiconductor substrate. The integrated circuit also includes a trench in the semiconductor substrate, the trench including a layer of a nanoparticle material. The integrated circuit further includes an interconnect region above the trench.