18672981. FUSE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
Contents
FUSE STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor(s)
Bao-Ru Young of Hsinchu County (TW)
Tung-Heng Hsieh of Hsinchu County (TW)
FUSE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18672981 titled 'FUSE STRUCTURE
The abstract describes a fuse structure that includes first and second transistors with source, drain, and gate terminals, source/drain contacts, an insulator, and a source/drain contact via. A program line is connected to the source/drain contact via, allowing for breakdown of the insulator when a programming potential is applied.
- The fuse structure includes first and second transistors with source, drain, and gate terminals.
- Source/drain contacts are placed on the source terminal of the first transistor and the drain terminal of the second transistor.
- An insulator is positioned laterally between the source/drain contacts.
- A source/drain contact via is located on the first source/drain contact.
- A program line is connected to the source/drain contact via for programming potential application.
Potential Applications: - Integrated circuits - Semiconductor devices - Memory technologies
Problems Solved: - Efficient programming of fuses - Controlled breakdown of insulator
Benefits: - Reliable programming process - Enhanced functionality of semiconductor devices
Commercial Applications: Title: Semiconductor Fuse Structures for Enhanced Programming This technology can be utilized in the semiconductor industry for improved programming of fuses in integrated circuits, leading to more efficient and reliable devices. The market implications include advancements in memory technologies and semiconductor manufacturing processes.
Questions about Semiconductor Fuse Structures: 1. How does the programming potential cause the insulator to break down?
- The programming potential applied across the source/drain contact via and the drain terminal of the second transistor causes the insulator to break down due to its width configuration.
2. What are the main components of the fuse structure and their functions?
- The fuse structure consists of transistors, source/drain contacts, an insulator, a source/drain contact via, and a program line, each playing a crucial role in the programming process.
Original Abstract Submitted
A fuse structure includes first and second transistors where each of the first and the second transistors has a source terminal, a drain terminal, and a gate terminal; a first source/drain contact disposed on the source terminal of the first transistor; a second source/drain contact disposed on the drain terminal of the second transistor; an insulator disposed laterally between the first and the second source/drain contacts; a source/drain contact via disposed on the first source/drain contact; and a program line connected to the source/drain contact via, wherein a width of the insulator is configured such that a programming potential applied across the source/drain contact via and the drain terminal of the second transistor causes the insulator to break down.
