18672936. STACKING CMOS STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
Contents
STACKING CMOS STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor(s)
Chia-En Huang of Hsinchu County (TW)
Ching-Wei Tsai of Hsinchu City (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
STACKING CMOS STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18672936 titled 'STACKING CMOS STRUCTURE
The semiconductor structure described in the patent application includes a power rail, a first source/drain feature connected to the power rail via a via, an isolation feature placed over the first source/drain feature, and a second source/drain feature positioned over the isolation feature. Importantly, the first and second source/drain features have opposite conductivity types.
- Power rail with first source/drain feature connected via a via
- Isolation feature over the first source/drain feature
- Second source/drain feature over the isolation feature
- First and second source/drain features have opposite conductivity types
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Improved connectivity in semiconductor structures - Enhanced performance of electronic devices
Benefits: - Increased efficiency in power distribution - Better isolation between source/drain features - Enhanced overall functionality of semiconductor devices
Commercial Applications: Title: "Advanced Semiconductor Structures for Enhanced Performance in Electronics" This technology could be utilized in the production of high-performance electronic devices, leading to improved functionality and reliability. The market implications include increased demand for advanced semiconductor components in various industries.
Questions about Semiconductor Structures: 1. How does the placement of the isolation feature impact the performance of the semiconductor structure? 2. What are the specific advantages of having source/drain features with opposite conductivity types in this context?
Frequently Updated Research: Researchers are continuously exploring new materials and designs to further enhance the efficiency and performance of semiconductor structures. Stay updated on the latest advancements in this field to leverage cutting-edge technologies for future innovations.
Original Abstract Submitted
A semiconductor structure includes a power rail, a first source/drain feature disposed over the power rail, a via connecting the power rail to the first source/drain feature; an isolation feature disposed over the first source/drain feature, and a second source/drain feature disposed over the isolation feature, where the first and the second source/drain features are of opposite conductivity types.
