18672640. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
Contents
- 1 ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Device Optimization
- 1.13 Original Abstract Submitted
ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
Organization Name
Inventor(s)
Li-Te Chang of San Jose CA (US)
Murong Lang of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18672640 titled 'ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
Simplified Explanation
The patent application describes a method for identifying a threshold voltage offset for a memory block based on various metrics, and using this offset to perform read operations on the block.
Key Features and Innovation
- Identification of threshold voltage offset based on metrics such as media state, wordline group, or difference between wordlines.
- Modification of read level voltage using the threshold voltage offset for improved read operations.
Potential Applications
This technology can be applied in various memory devices and storage systems where accurate read operations are crucial.
Problems Solved
- Ensures accurate read operations on memory blocks.
- Improves overall performance and reliability of memory devices.
Benefits
- Enhanced read operation accuracy.
- Improved performance and reliability of memory devices.
Commercial Applications
- Data storage systems
- Embedded systems
- Mobile devices
Prior Art
Readers can explore prior patents related to memory device optimization and read operation accuracy.
Frequently Updated Research
Stay updated on advancements in memory device technology and read operation optimization.
Questions about Memory Device Optimization
How does the threshold voltage offset improve read operations on memory blocks?
The threshold voltage offset helps adjust the read level voltage for more accurate and reliable read operations.
What are the key metrics used to determine the threshold voltage offset in this technology?
Metrics such as media state, wordline group, and differences between wordlines are used to identify the threshold voltage offset.
Original Abstract Submitted
A block of a memory device is identified. A threshold voltage offset corresponding to a wordline associated with the block is identified based on a threshold voltage offset table. The threshold voltage offset table corresponds to at least one of: a value of a media state metric associated with the block, a wordline group of the wordline, or a difference between the wordline and a boundary wordline of the block. A read operations is performed on the block using a read level voltage modified by the threshold voltage offset, wherein the read level voltage is associated with the block.
