18671431. TWO-TERMINAL MEMORY DEVICE simplified abstract (KIA CORPORATION)
Contents
TWO-TERMINAL MEMORY DEVICE
Organization Name
Inventor(s)
Jong-Seok Lee of Suwon-si (KR)
Sang-Hyeok Yang of Suwon-si (KR)
TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18671431 titled 'TWO-TERMINAL MEMORY DEVICE
The patent application describes a two-terminal memory device consisting of a substrate, an extended drain connected to a drain and the substrate, a ferroelectric layer covering the extended drain and the substrate, and a source laminated on the ferroelectric layer facing the drain.
- The device includes an extended drain that extends from a drain and is laminated on the substrate.
- A ferroelectric layer is connected to the drain and covers the extended drain and the substrate.
- A source is laminated on the ferroelectric layer to face the drain.
Potential Applications: - Memory storage devices - Non-volatile memory applications - Electronic devices requiring high-density memory storage
Problems Solved: - Providing a compact and efficient memory device - Enhancing memory storage capabilities - Improving data retention and retrieval in electronic devices
Benefits: - Increased memory storage capacity - Faster data access and retrieval - Enhanced reliability and durability of memory devices
Commercial Applications: Title: "Innovative Two-Terminal Memory Device for High-Density Storage" This technology can be used in various electronic devices such as smartphones, tablets, and computers for improved memory storage and data management. It can also be applied in data centers and servers for high-performance computing.
Questions about the technology: 1. How does the two-terminal memory device differ from traditional memory storage solutions? 2. What are the advantages of using a ferroelectric layer in memory devices?
Frequently Updated Research: Researchers are continually exploring new materials and designs to further enhance the performance and efficiency of memory devices. Stay updated on the latest advancements in ferroelectric memory technology for potential future applications.
Original Abstract Submitted
A two-terminal memory device includes: a substrate; an extended drain extending from a drain and a lower surface of the drain and laminated on the substrate; a ferroelectric layer connected to the drain and covering the extended drain and the substrate; and a source laminated on the ferroelectric layer to face the drain.
