18671060. THIN FILM TRANSISTOR AND DISPLAY DEVICE simplified abstract (Japan Display Inc.)
Contents
THIN FILM TRANSISTOR AND DISPLAY DEVICE
Organization Name
Inventor(s)
Masashi Tsubuku of Minato-ku (JP)
Tatsuya Toda of Minato-ku (JP)
THIN FILM TRANSISTOR AND DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18671060 titled 'THIN FILM TRANSISTOR AND DISPLAY DEVICE
Simplified Explanation: The patent application describes a thin film transistor with an active layer made of an oxide semiconductor containing indium and gallium, along with a gate electrode, a first gate insulating layer, and a second gate insulating layer made of a hydrogen block layer.
Key Features and Innovation:
- Active layer made of an oxide semiconductor with indium and gallium.
- Inclusion of a hydrogen block layer as the second gate insulating layer.
- Utilization of a thin film transistor design.
Potential Applications: The technology can be used in:
- Display panels
- Touchscreen devices
- Electronic circuits
Problems Solved:
- Improved performance and stability of thin film transistors.
- Enhanced efficiency in electronic devices.
Benefits:
- Higher performance levels.
- Increased durability and stability.
- Potential cost-effectiveness in production.
Commercial Applications: The technology can be applied in various industries such as consumer electronics, telecommunications, and automotive for improved device performance and efficiency.
Prior Art: Readers can explore prior research on thin film transistors, oxide semiconductors, and hydrogen block layers to understand the background of this innovation.
Frequently Updated Research: Stay updated on advancements in oxide semiconductor technology, thin film transistor design, and gate insulating layers for potential improvements in performance and applications.
Questions about Thin Film Transistors: 1. How do thin film transistors differ from traditional transistors? 2. What are the advantages of using oxide semiconductors in thin film transistors?
Original Abstract Submitted
A thin film transistor including: an active layer formed of an oxide semiconductor including at least indium and gallium; a gate electrode; a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side; and a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side.
