18670779. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)

SEMICONDUCTOR STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor(s)

Meng-Hsuan Hsiao of Hsinchu City (TW)

Wei-Sheng Yun of Taipei City (TW)

Winnie Victoria Wei-Ning Chen of Zhubei City (TW)

Tung Ying Lee of Hsinchu City (TW)

Ling-Yen Yeh of Hsinchu City (TW)

SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18670779 titled 'SEMICONDUCTOR STRUCTURE

The semiconductor structure described in the patent application consists of multiple nanowires stacked vertically over a semiconductor fin, with a source/drain wrapping around them.

• The structure includes a first nanowire over a semiconductor fin, a second nanowire over the first nanowire, and a third nanowire over the second nanowire.
• The source/drain wraps around the first, second, and third nanowires.
• The thickness of the source/drain between the nanowires varies, with different thicknesses in different portions of the structure.

Potential Applications: - This semiconductor structure could be used in advanced electronic devices such as transistors and sensors. - It may also find applications in nanoscale technologies for data storage and communication.

Problems Solved: - The structure provides a compact and efficient way to integrate multiple nanowires in a semiconductor device. - It allows for precise control over the thickness of the source/drain regions, enhancing device performance.

Benefits: - Improved performance and efficiency in electronic devices. - Enhanced scalability and miniaturization in semiconductor technology.

Commercial Applications: Title: Advanced Semiconductor Devices for Next-Generation Electronics This technology could be utilized in the development of high-performance transistors for smartphones, computers, and other electronic devices. The compact design and precise control over the source/drain regions make it a valuable innovation for the semiconductor industry.

Questions about the technology: 1. How does the varying thickness of the source/drain regions impact the performance of the semiconductor structure? 2. What are the potential challenges in manufacturing semiconductor devices with multiple stacked nanowires?

Original Abstract Submitted

A semiconductor structure is provided. The semiconductor structure includes a first nanowire over a semiconductor fin. The semiconductor structure also includes a second nanowire over the first nanowire and a third nanowire over the second nanowire. The semiconductor structure further includes a source/drain wrapping around the first nanowire, the second nanowire and the third nanowire. A thickness of a first portion of the source/drain vertically sandwiched between the first nanowire and the second nanowire is different from a thickness of a second portion of the source/drain vertically sandwiched between the second nanowire and the third nanowire.