18670132. BACKSIDE GATE CONTACT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

BACKSIDE GATE CONTACT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Huan-Chieh Su of Changua County (TW)

Chun-Yuan Chen of HsinChu (TW)

Lo-Heng Chang of Hsinchu (TW)

Li-Zhen Yu of New Taipei City (TW)

Lin-Yu Huang of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chih-Hao Wang of Hsinchu County (TW)

BACKSIDE GATE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18670132 titled 'BACKSIDE GATE CONTACT

The abstract describes a semiconductor structure with first nanostructures, a first gate structure wrapping around each nanostructure, and a backside gate contact below the nanostructures.

• The semiconductor structure includes first nanostructures and a first gate structure wrapping around each nanostructure.
• The first gate structure is disposed over an isolation structure.
• A backside gate contact is located below the first nanostructures and adjacent to the isolation structure.
• The bottom surface of the first gate structure is in direct contact with the backside gate contact.

Potential Applications: - This technology could be used in the development of advanced semiconductor devices. - It may find applications in the manufacturing of high-performance electronic components.

Problems Solved: - Provides a more efficient and compact design for semiconductor structures. - Enhances the performance and functionality of semiconductor devices.

Benefits: - Improved performance and efficiency in semiconductor devices. - Enables the development of smaller and more powerful electronic components.

Commercial Applications: - This technology could be valuable in the semiconductor industry for creating cutting-edge electronic devices. - It may have implications for the development of next-generation consumer electronics.

Questions about Semiconductor Structures: 1. How does the direct contact between the gate structure and the backside gate contact improve the performance of the semiconductor structure? 2. What are the potential challenges in manufacturing semiconductor structures with first nanostructures and backside gate contacts?

Original Abstract Submitted

Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.