18668645. ANTENNA AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)

From WikiPatents
Jump to navigation Jump to search

ANTENNA AND PLASMA PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Hitoshi Kato of Iwate (JP)

Hiroyuki Kikuchi of Iwate (JP)

ANTENNA AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18668645 titled 'ANTENNA AND PLASMA PROCESSING APPARATUS

Simplified Explanation: This patent application discloses a method for adjusting the oxidation or nitriding amount in a substrate process within a process chamber by deforming an antenna member based on the determined shape to control the process gas supply.

  • The method involves providing a process chamber with a housing, a susceptor, and an antenna member.
  • A process gas supply unit is placed between the housing's bottom exterior and the susceptor's upper surface.
  • The shape of the antenna member is determined based on the tendencies for the oxidation or nitriding amount to change with distance from the housing's bottom inside.
  • The antenna member is deformed to adjust the oxidation or nitriding amount of the substrate process.

Key Features and Innovation:

  • Adjustment of oxidation or nitriding amount in a substrate process.
  • Deformation of antenna member to control process gas supply.
  • Optimization of oxidation or nitriding based on distance from the housing's bottom.

Potential Applications:

  • Semiconductor manufacturing.
  • Thin film deposition processes.
  • Surface treatment of materials.

Problems Solved:

  • Inconsistent oxidation or nitriding in substrate processes.
  • Lack of control over process gas supply.
  • Difficulty in adjusting oxidation or nitriding amounts.

Benefits:

  • Improved process control.
  • Enhanced substrate quality.
  • Increased efficiency in substrate processing.

Commercial Applications:

  • Optimizing oxidation or nitriding in semiconductor manufacturing.
  • Enhancing thin film deposition processes.
  • Improving surface treatment of materials.

Questions about the Technology: 1. How does the deformation of the antenna member impact the oxidation or nitriding process? 2. What are the specific parameters used to determine the shape of the antenna member for optimal process control?


Original Abstract Submitted

A method for adjusting the oxidation or nitriding amount in a substrate process within a process chamber is disclosed. It involves providing a process chamber with a housing, a susceptor for holding the substrate, and an antenna member extending radially from the susceptor's center towards its outer periphery. A process gas supply unit is placed between the housing's bottom exterior and the susceptor's upper surface. The antenna member's shape on the central axis and outer peripheral sides of the susceptor is determined based on the tendencies for the oxidizing amount to decrease and increase, respectively, with increasing distance from the housing's bottom inside. The antenna is deformed based on the determined shape to adjust the oxidation or nitriding amount of the substrate process.

Retrieved from "http://wikipatents.org/index.php?title=18668645._ANTENNA_AND_PLASMA_PROCESSING_APPARATUS_simplified_abstract_(Tokyo_Electron_Limited)&oldid=232001"