18668021. ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES simplified abstract (Micron Technology, Inc.)
ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES
Organization Name
Inventor(s)
Phong Sy Nguyen of Livermore CA (US)
James Fitzpatrick of Laguna Niguel CA (US)
Kishore Kumar Muchherla of Fremont CA (US)
ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18668021 titled 'ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES
Simplified Explanation:
This patent application describes a memory system that can store multiple bits of data in a single memory cell by finely programming the threshold voltage of the cell based on the combination of bit values stored. The memory device uses a mapping between bit value combinations and threshold levels to achieve this.
Key Features and Innovation:
- Memory system storing multiple bits in a single cell
- Coarse programming of threshold voltage based on bit value combinations
- Partitioning of threshold levels into groups with associated read voltages
- Interleaved application of read voltages in a sequence to read the memory cell
- Fine programming of threshold voltage based on data bits read back
Potential Applications:
This technology could be used in various memory storage applications where efficient utilization of memory space is crucial, such as in solid-state drives, embedded systems, and data centers.
Problems Solved:
This technology addresses the challenge of storing multiple bits of data in a single memory cell effectively and efficiently, optimizing memory usage and enhancing data storage capabilities.
Benefits:
The benefits of this technology include increased memory storage capacity, improved data storage efficiency, and enhanced performance in memory-intensive applications.
Commercial Applications:
Potential commercial applications of this technology include the development of high-density memory solutions for consumer electronics, data storage devices, and cloud computing infrastructure.
Prior Art:
Readers interested in exploring prior art related to this technology can start by researching advancements in non-volatile memory technologies, multi-level cell (MLC) memory systems, and memory cell programming techniques.
Frequently Updated Research:
Researchers in the field of memory storage technologies are constantly exploring new methods to enhance memory capacity and efficiency, making this an area of frequent research updates and advancements.
Questions about Memory Cell Threshold Voltage Programming: 1. How does the mapping between bit value combinations and threshold levels optimize memory storage? 2. What are the potential challenges in implementing this memory system in real-world applications?
Original Abstract Submitted
A memory system to store multiple bits of data in a memory cell. A memory device coarsely programs a threshold voltage of the memory cell to a first level representative of a combination of bit values according to a mapping between bit value combinations and threshold levels. The threshold levels are partitioned into groups, each containing a subset of the threshold levels and having associated read voltages separating threshold levels in the subset. A group identification of a first group, among the groups, containing the first level is determined for the memory cell. The memory device applies read voltages of different groups, interleaved in an increasing order in a sequence, to read the memory cell when a read voltage applied is associated with the first group. The data bits read back from the memory cell are used to finely program the threshold voltage of the memory cell.
