18667009. SEMICONDUCTOR DEVICE simplified abstract (ROHM Co., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Katsuhiko Yoshihara of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18667009 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a support member, semiconductor element, buffer layer, and conductive member. The semiconductor element includes first and gate electrodes on the opposite side facing the support member in the first direction. The semiconductor element is bonded to the support member, with the buffer layer electrically bonded to the first electrode and the conductive member electrically bonded to the buffer layer. A first solid phase diffusion binding layer is present between the first electrode and the buffer layer. The semiconductor element also includes a gate finger connected to the gate electrode on the same side as the gate electrode in the first direction, with the gate finger protruding beyond the first electrode towards the buffer layer. The buffer layer has a recess recessed from the side facing the semiconductor element in the first direction, accommodating at least a part of the protrusion in the recess.
- The semiconductor device includes a support member, semiconductor element, buffer layer, and conductive member.
- The semiconductor element has first and gate electrodes on the opposite side facing the support member in the first direction.
- A first solid phase diffusion binding layer is present between the first electrode and the buffer layer.
- The semiconductor element also includes a gate finger connected to the gate electrode, protruding towards the buffer layer.
- The buffer layer has a recess accommodating part of the protrusion from the gate finger.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the electronics industry for improved performance and reliability of electronic components.
Problems Solved: - Enhances the electrical bonding and connection within semiconductor devices. - Improves the overall efficiency and functionality of semiconductor elements.
Benefits: - Enhanced electrical performance and reliability. - Improved manufacturing processes for semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to better consumer electronics, communication systems, and industrial equipment. The market implications include increased demand for advanced semiconductor components in various industries.
Questions about Semiconductor Device Technology: 1. How does the buffer layer contribute to the overall functionality of the semiconductor device? The buffer layer plays a crucial role in providing electrical bonding and connection within the semiconductor device, enhancing its performance and reliability.
2. What are the potential future advancements in semiconductor device technology that could build upon this innovation? Future advancements in semiconductor device technology may focus on further improving electrical connections, increasing efficiency, and reducing manufacturing costs.
Original Abstract Submitted
A semiconductor device includes a support member, semiconductor element, buffer layer and conductive member. The semiconductor element includes first and gate electrodes opposite from the side facing the support member in first direction. The semiconductor element is bonded to the support member. The buffer layer is electrically bonded to the first electrode. The conductive member is electrically bonded to the buffer layer. A first solid phase diffusion binding layer is between the first electrode and the buffer layer. The semiconductor element includes, on the same side as the gate electrode in first direction, a gate finger connected to the gate electrode. The gate finger includes a protrusion beyond the first electrode toward the buffer layer. The buffer layer includes a recess recessed from the side facing the semiconductor element in first direction. At least a part of the protrusion is accommodated in the recess.
