18666835. SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jhen-Yu Tsai of New Taipei City (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18666835 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes two vertical transistors, each with a channel region and a word line wrapping around it, separated by a dielectric layer.
- The first vertical transistor has a first channel region and a first word line with a dielectric layer in between.
- The second vertical transistor has a second channel region and a second word line with a dielectric layer in between.
- A dielectric layer wraps around the upper portions of the word lines, and an air gap is inserted between the lower portions of the two transistors.
Potential Applications:
- This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
- It can improve the performance and efficiency of integrated circuits in electronic devices such as smartphones, computers, and other consumer electronics.
Problems Solved:
- This technology addresses the need for more efficient and compact semiconductor devices with improved performance.
- It helps in reducing signal interference and improving the overall functionality of electronic devices.
Benefits:
- Enhanced performance and efficiency of semiconductor devices.
- Reduction in signal interference and improved functionality of electronic devices.
- Potential for smaller and more compact electronic devices with increased capabilities.
Commercial Applications:
- The technology can be applied in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.
Prior Art:
- Prior research and patents related to vertical transistors and dielectric layers in semiconductor devices can provide valuable insights into the development of this technology.
Frequently Updated Research:
- Ongoing research in the field of semiconductor technology and device miniaturization can provide further advancements and improvements to this technology.
Questions about Semiconductor Device Technology: 1. How does the insertion of an air gap between the two vertical transistors impact the overall performance of the semiconductor device? 2. What are the potential challenges in scaling up this technology for mass production in the semiconductor industry?
Original Abstract Submitted
A semiconductor device includes a first vertical transistor and a second vertical transistor adjacent to the first vertical transistor. The first vertical transistor includes a first channel region, a first word line wrapping the first channel region, and a first word line dielectric layer between the first channel region and the first word line. The second vertical transistor includes a second channel region, a second word line wrapping the second channel region, and a second word line dielectric layer between the second channel region and the second word line. The semiconductor device further includes a dielectric layer wrapping upper portions of the first word line and the second word line, and an air gap inserted between lower portions of the first vertical transistor and the second vertical transistor.
