18666035. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Toshifumi Minami of Yokohama Kanagawa (JP)

Atsuhiro Sato of Meguro Tokyo (JP)

Keisuke Yonehama of Kamakura Kanagawa (JP)

Yasuyuki Baba of Zama Kanagawa (JP)

Hiroshi Shinohara of Yokosuka Kanawaga (JP)

Hideyuki Kamata of Kawasaki Kanagawa (JP)

Teppei Higashitsuji of Fujisawa Kanagawa (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18666035 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the patent application consists of a conducting layer, an insulating layer, pillars, and a plate with convex and non-convex portions.

• The device includes a conducting layer and an insulating layer above a semiconductor substrate.
• It features pillars that extend in a direction crossing the substrate's surface.
• A plate is positioned between the pillars, extending in the same direction with convex and non-convex portions on its surface.

Potential Applications: - This technology could be used in various semiconductor memory devices to improve performance and efficiency. - It may find applications in data storage systems, mobile devices, and other electronic devices requiring memory components.

Problems Solved: - Enhances the functionality and reliability of semiconductor memory devices. - Improves data storage and retrieval processes in electronic devices.

Benefits: - Increased speed and efficiency in data storage and retrieval. - Enhanced durability and longevity of semiconductor memory devices.

Commercial Applications: Title: Innovative Semiconductor Memory Device for Enhanced Data Storage This technology could revolutionize the semiconductor memory industry by offering faster, more reliable data storage solutions for various electronic devices. The market implications include improved performance in smartphones, computers, and other gadgets.

Questions about Semiconductor Memory Device: 1. How does the design of the plate with convex and non-convex portions contribute to the performance of the semiconductor memory device? 2. What sets this semiconductor memory device apart from traditional memory devices in terms of efficiency and reliability?

Original Abstract Submitted

A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.