18665005. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18665005 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of first conductive lines on a substrate, selection transistors connected to the ends of these lines, and transistors with different gate widths.
- The device has first conductive lines running parallel to the substrate's top surface.
- First selection transistors are connected to one end of the conductive lines.
- Second selection transistors are connected to the opposite end of the conductive lines.
- The first selection transistors have a larger gate width compared to the second selection transistors.
Potential Applications: - This technology can be used in various memory storage devices such as RAM and flash memory. - It can also be applied in microprocessors and other integrated circuits for data storage.
Problems Solved: - Enhances the efficiency and performance of semiconductor memory devices. - Allows for more precise control over data storage and retrieval processes.
Benefits: - Improved speed and reliability in data storage operations. - Higher density memory storage capabilities. - Reduction in power consumption for memory devices.
Commercial Applications: Title: Advanced Semiconductor Memory Technology for Enhanced Data Storage This technology can revolutionize the memory storage industry by offering faster, more efficient, and higher capacity memory solutions. It can be utilized in consumer electronics, data centers, and other computing devices to enhance overall performance and user experience.
Questions about Semiconductor Memory Devices: 1. How does the gate width of transistors impact the performance of semiconductor memory devices? The gate width affects the speed and efficiency of data storage and retrieval processes in these devices. A smaller gate width can lead to faster operation and reduced power consumption.
2. What are the key differences between first selection transistors and second selection transistors in this semiconductor memory device? The main distinction lies in the gate width, with the first selection transistors having a larger gate width compared to the second selection transistors. This difference allows for more precise control over the memory storage operations.
Original Abstract Submitted
A semiconductor memory device includes: first conductive lines provided on a substrate and extending in a first direction in parallel, each of the first conductive lines including a first end portion and a second end portion that are opposite to each other, the first direction being parallel to a top surface of the substrate; first selection transistors respectively connected to the first end portions of the first conductive lines; and second selection transistors respectively connected to the second end portions of the first conductive lines. Each of the first selection transistors may have a first gate width. Each of the second selection transistors may have a second gate width smaller than the first gate width.
