18664387. SEMICONDUCTOR INTEGRATED CIRCUIT simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
SEMICONDUCTOR INTEGRATED CIRCUIT
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
SEMICONDUCTOR INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18664387 titled 'SEMICONDUCTOR INTEGRATED CIRCUIT
Simplified Explanation: The semiconductor device described in the patent application includes a sequential circuit with a first transistor and a capacitor. The first transistor contains a semiconductor layer made of indium, zinc, and oxygen, forming a channel formation region. When the first transistor turns off, a node connected to its source or drain and the capacitor enters a floating state, maintaining the node's potential for an extended period. A power-gating control circuit can regulate the supply of power to the sequential circuit, ensuring the node's potential remains stable even when power is cut off.
- The semiconductor device features a sequential circuit with a first transistor and a capacitor.
- The first transistor is composed of a semiconductor layer containing indium, zinc, and oxygen.
- The node connected to the first transistor and the capacitor enters a floating state when the transistor turns off, preserving the node's potential.
- A power-gating control circuit manages the power supply to the sequential circuit, allowing the node's potential to be maintained even when power is disconnected.
Potential Applications: 1. Integrated circuits 2. Power management systems 3. Portable electronic devices
Problems Solved: 1. Maintaining node potential in semiconductor devices 2. Efficient power management in sequential circuits
Benefits: 1. Extended node potential retention 2. Improved power efficiency in semiconductor devices
Commercial Applications: Power-efficient integrated circuits for consumer electronics and IoT devices
Questions about Semiconductor Devices: 1. How does the composition of the first transistor contribute to the device's performance? 2. What role does the power-gating control circuit play in maintaining the node potential?
Original Abstract Submitted
Provided is a semiconductor device including a sequential circuit including a first transistor and a capacitor. The first transistor includes a semiconductor layer including indium, zinc, and oxygen to form a channel formation region. A node electrically connected to a source or a drain of the first transistor and a capacitor becomes a floating state when the first transistor turns off, so that a potential of the node can be maintained for a long period. A power-gating control circuit may be provided to control supply of power supply potential to the sequential circuit. The potential of the node still can be maintained while supply of the power supply potential is stopped.
