18663493. DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Display Co., Ltd.)
Contents
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SOONMI Choi of Cheonan-si (KR)
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18663493 titled 'DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
The abstract of the patent application describes a display device with a thin film encapsulation layer containing silicon oxynitride and an organic layer, providing stress resistance.
- The display device includes a light emitting structure on a substrate.
- The thin film encapsulation layer consists of an inorganic layer with silicon oxynitride and an organic layer.
- A portion of the inorganic layer has a stress intensity factor of 1.6 MPa or higher.
Potential Applications: - This technology can be used in the manufacturing of high-quality display screens for electronic devices. - It can also be applied in the development of advanced lighting systems.
Problems Solved: - Addresses the issue of stress on display devices, ensuring durability and longevity. - Provides enhanced protection for the light emitting structure.
Benefits: - Improved reliability and performance of display devices. - Extended lifespan of electronic screens. - Enhanced visual quality and brightness.
Commercial Applications: - This technology can be utilized in the production of smartphones, tablets, TVs, and other electronic devices with display screens.
Questions about Display Device Technology: 1. How does the inorganic layer with silicon oxynitride contribute to the stress resistance of the display device? 2. What are the specific advantages of using this thin film encapsulation layer in electronic displays?
Original Abstract Submitted
A display device includes a light emitting structure disposed on a substrate, and a thin film encapsulation layer disposed on the light emitting structure and including an inorganic layer containing silicon oxynitride and an organic layer. A portion of the inorganic layer has a stress intensity factor of about 1.6 MPa or more.
