18662238. SEMICONDUCTOR MEMORY simplified abstract (KIOXIA CORPORATION)
Contents
SEMICONDUCTOR MEMORY
Organization Name
Inventor(s)
Noboru Shibata of Kawasaki Kanagawa (JP)
Hironori Uchikawa of Fujisawa Kanagawa (JP)
Taira Shibuya of Fujisawa Kanagawa (JP)
SEMICONDUCTOR MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18662238 titled 'SEMICONDUCTOR MEMORY
Simplified Explanation:
The semiconductor memory described in the patent application consists of two memory cells, each set with a different threshold voltage level. These memory cells are accessed through separate word lines, and a controller is used to read data based on the combination of the threshold voltages of the two cells.
- The semiconductor memory includes two memory cells with different threshold voltage levels.
- Each memory cell is accessed through a separate word line.
- Data is read based on the combination of the threshold voltages of the two memory cells.
Key Features and Innovation:
- Utilizes memory cells with different threshold voltage levels.
- Enables reading of data based on a combination of threshold voltages.
- Efficient use of word lines for accessing memory cells.
Potential Applications:
- Solid-state drives
- Embedded systems
- Consumer electronics
Problems Solved:
- Enhanced data storage efficiency
- Improved memory access speed
- Increased data processing capabilities
Benefits:
- Higher data storage density
- Faster data retrieval
- Enhanced overall system performance
Commercial Applications:
The technology can be applied in various industries such as data storage, computing, and telecommunications, leading to improved product performance and efficiency.
Questions about Semiconductor Memory Technology:
1. How does the use of memory cells with different threshold voltage levels improve data storage efficiency?
- The use of memory cells with different threshold voltage levels allows for more data to be stored in a smaller space, increasing storage density.
2. What impact does reading data based on a combination of threshold voltages have on memory access speed?
- Reading data based on a combination of threshold voltages can lead to faster data retrieval as it allows for more efficient data processing.
Original Abstract Submitted
A semiconductor memory includes a first memory cell configured to be set with a first threshold voltage, the first threshold voltage being one of different threshold voltage levels, a second memory cell configured to be set with a second threshold voltage, the second threshold voltage being one of different threshold voltage levels, a first word line coupled to the first memory cell, a second word line coupled to the second memory cell, and a controller configured to read data of one of different bits based on a combination of the first threshold voltage of the first memory cell and the second threshold voltage of the second memory cell.
