18654028. SiC SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
SiC SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sawa Haruyama of Kyoto-shi (JP)
Yasuhiro Kawakami of Kyoto-shi (JP)
Seiya Nakazawa of Kyoto-shi (JP)
Yasunori Kutsuma of Kyoto-shi (JP)
SiC SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18654028 titled 'SiC SEMICONDUCTOR DEVICE
The abstract describes a patent application for an SiC semiconductor device with a unique structure.
- SiC semiconductor layer with a first main surface as an element forming surface and a second main surface on the opposite side.
- Plurality of side surfaces connecting the first and second main surfaces.
- Modified lines formed on the side surfaces, each extending in a band shape along a tangential direction to the first main surface.
- Modified lines have properties different from the SiC monocrystal.
Potential Applications: - High-power electronic devices - High-temperature applications - Aerospace and defense industries
Problems Solved: - Improved performance and efficiency of SiC semiconductor devices - Enhanced thermal management capabilities - Increased reliability in harsh environments
Benefits: - Higher power handling capabilities - Improved thermal conductivity - Extended device lifespan
Commercial Applications: Title: "Advanced SiC Semiconductor Devices for High-Power Applications" This technology can be utilized in industries requiring high-power electronic devices, such as electric vehicles, renewable energy systems, and industrial equipment.
Questions about SiC Semiconductor Devices: 1. How does the modified line structure on the SiC semiconductor layer improve device performance?
- The modified lines enhance thermal management and overall efficiency of the device.
2. What sets SiC semiconductor devices apart from traditional silicon-based devices?
- SiC devices offer higher power handling capabilities and better performance in high-temperature environments.
Original Abstract Submitted
An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.
