18653473. SEMICONDUCTOR STRUCTURE INCLUDING SECTIONED WELL REGION simplified abstract (GlobalFoundries U.S. Inc.)
Contents
SEMICONDUCTOR STRUCTURE INCLUDING SECTIONED WELL REGION
Organization Name
Inventor(s)
Navneet Jain of Milpitas CA (US)
Mahbub Rashed of Cupertino CA (US)
SEMICONDUCTOR STRUCTURE INCLUDING SECTIONED WELL REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18653473 titled 'SEMICONDUCTOR STRUCTURE INCLUDING SECTIONED WELL REGION
The semiconductor structure described in the patent application includes a substrate with a deep well region and alternating stripes of different well regions within the substrate, along with an isolation region dividing a well region into sections.
- The semiconductor structure features alternating stripes of first and second well regions within the substrate, allowing for electrical isolation of different sections of a well region.
- The isolation region divides a well region into sections, enabling devices formed on an insulator layer above the different sections to be subjected to different back-biasing conditions.
- This innovation provides a way to electrically isolate different sections of a well region, allowing for more precise control and customization of back-biasing conditions for devices on the semiconductor structure.
- By utilizing alternating well regions and an isolation region, the semiconductor structure offers enhanced flexibility and functionality for various applications in semiconductor device manufacturing.
- The design of the semiconductor structure allows for improved performance and efficiency in devices that require different back-biasing conditions for optimal operation.
Potential Applications: - This technology can be applied in the development of advanced semiconductor devices requiring precise control over back-biasing conditions. - It can be utilized in the production of high-performance integrated circuits and other electronic components that benefit from customized back-biasing capabilities.
Problems Solved: - Provides a solution for achieving electrical isolation of different sections of a well region in a semiconductor structure. - Enables more efficient and effective customization of back-biasing conditions for devices on the semiconductor structure.
Benefits: - Enhanced control and customization of back-biasing conditions for semiconductor devices. - Improved performance and efficiency in devices utilizing the semiconductor structure. - Increased flexibility and functionality in semiconductor device manufacturing processes.
Commercial Applications: - The technology can be commercialized for the production of advanced integrated circuits, microprocessors, and other semiconductor devices that require tailored back-biasing capabilities.
Questions about the technology: 1. How does the semiconductor structure achieve electrical isolation of different sections of a well region? 2. What are the potential implications of the customizable back-biasing conditions enabled by this technology?
Original Abstract Submitted
Disclosed is a semiconductor structure including a substrate with a first type conductivity (e.g., a P-silicon substrate); a deep well region within the substrate and having a second type conductivity (e.g., a deep Nwell); alternating stripes of first and second well regions (e.g., of Pwells and Nwells with each Pwell positioned laterally between and abutting two Nwells) within the substrate above and traversing the deep well region; and an isolation region (e.g., an Nwell-type isolation region) dividing a first well region (e.g., a Pwell) into sections. Since the sectioned first well region has the first type conductivity and since the isolation region, the deep well region below, and the adjacent well regions on either side have the second type conductivity, the different sections of the sectioned well region are electrically isolated and devices formed on an insulator layer above the different sections can be subjected to different back-biasing conditions.
