18652167. NON-VOLATILE STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
NON-VOLATILE STORAGE DEVICE
Organization Name
Inventor(s)
Masaaki Higuchi of Yokkaichi Mie (JP)
Masaru Kito of Kuwana Mie (JP)
Masao Shingu of Yokkaichi Mie (JP)
NON-VOLATILE STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18652167 titled 'NON-VOLATILE STORAGE DEVICE
Simplified Explanation: The patent application describes a non-volatile storage device with a unique structure involving multiple layers and a semiconductor pillar.
- The device includes a first layer, a second layer, and a stacked body with conductive films.
- A semiconductor pillar penetrates the stacked body and layers, reaching the first layer.
- The semiconductor pillar consists of a semiconductor film and a memory film covering it.
- The memory film has two portions, one between the stacked body and semiconductor film, and the other between the second layer and semiconductor film.
Key Features and Innovation:
- Unique structure with multiple layers and a semiconductor pillar.
- Memory film covering the semiconductor film for data storage.
- Different portions of the memory film for specific functions.
Potential Applications:
- Data storage devices.
- Semiconductor technology.
- Memory storage solutions.
Problems Solved:
- Efficient data storage.
- Enhanced semiconductor performance.
- Improved memory capabilities.
Benefits:
- Increased data storage capacity.
- Enhanced semiconductor functionality.
- Improved memory retention.
Commercial Applications: Potential commercial applications include:
- Solid-state drives.
- Embedded memory solutions.
- Semiconductor manufacturing.
Prior Art: Readers can explore prior art related to semiconductor storage devices, non-volatile memory technology, and semiconductor pillar structures.
Frequently Updated Research: Stay updated on advancements in semiconductor storage technology, non-volatile memory innovations, and semiconductor pillar designs.
Questions about Non-Volatile Storage Devices: 1. How does the unique structure of this non-volatile storage device improve data storage efficiency? 2. What are the potential commercial applications of this semiconductor pillar technology in the memory storage industry?
Original Abstract Submitted
According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an extending direction of the semiconductor pillar, and a memory film which covers a periphery of the semiconductor film. The memory film includes a first portion formed between the stacked body and the semiconductor film and a second portion formed between the second layer and the semiconductor film. An outer periphery of the second portion in a plane perpendicular to the extending direction is wider than an outer periphery of the first portion on a second layer side of the stacked body.
