18649986. SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract (Micron Technology, Inc.)
Contents
SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT
Organization Name
Inventor(s)
Kyle K. Kirby of Eagle ID (US)
Kunal R. Parekh of Boise ID (US)
SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18649986 titled 'SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT
Simplified Explanation: The patent application describes semiconductor devices with a metal interconnect that extends vertically through a portion of the device to the back side of a semiconductor substrate.
- The top region of the metal interconnect is located below a metal routing layer in a horizontal plane.
- The method of fabricating the semiconductor device involves etching a via into the semiconductor substrate, filling it with a metal material, forming a metal routing layer, and removing a portion of the bottom of the substrate to expose the bottom region of the filled via.
Key Features and Innovation:
- Vertical metal interconnect through a semiconductor substrate.
- Top region of the metal interconnect below a metal routing layer.
- Method includes etching a via, filling with metal, forming a routing layer, and exposing the bottom region of the filled via.
Potential Applications: This technology could be used in the manufacturing of advanced semiconductor devices, integrated circuits, and microprocessors.
Problems Solved:
- Enhanced connectivity in semiconductor devices.
- Improved signal transmission efficiency.
- Better integration of metal interconnects in semiconductor substrates.
Benefits:
- Increased performance of semiconductor devices.
- Higher reliability and durability.
- Enhanced functionality in complex electronic systems.
Commercial Applications: The technology could be applied in the production of smartphones, computers, automotive electronics, and other consumer electronics.
Prior Art: Researchers can explore prior patents related to semiconductor device interconnect technologies and metal routing layers.
Frequently Updated Research: Ongoing research in semiconductor fabrication techniques and materials could influence the development of this technology.
Questions about Semiconductor Device Interconnects: 1. How does the vertical metal interconnect improve the performance of semiconductor devices? 2. What are the potential challenges in integrating metal interconnects in semiconductor substrates?
Original Abstract Submitted
Semiconductor devices are described that have a metal interconnect extending vertically through a portion of the device to the back side of a semiconductor substrate. A top region of the metal interconnect is located vertically below a horizontal plane containing a metal routing layer. Method of fabricating the semiconductor device can include etching a via into a semiconductor substrate, filling the via with a metal material, forming a metal routing layer subsequent to filling the via, and removing a portion of a bottom of the semiconductor substrate to expose a bottom region of the metal filled via.
