18649713. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Masakazu Baba of Matsumoto-city (JP)
Shinsuke Harada of Tsukuba-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18649713 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a drift layer, a base layer, multiple trenches, gate electrodes, and a diode electrode.
- The device features a striped pattern formed by the first portions of the first trenches extending in a first direction.
- The second trench includes second portions that run parallel to the first portions.
- Gate electrodes are placed in the first trenches, while the diode electrode is located in the second trench.
- The diode electrode comprises inner electrodes in the second portions and an outer electrode connecting them and surrounding the ends of the first portions in a plan view.
Potential Applications: - Power electronics - Semiconductor devices - Integrated circuits
Problems Solved: - Efficient power management - Enhanced semiconductor performance - Improved device reliability
Benefits: - Higher efficiency in power applications - Increased functionality in semiconductor devices - Enhanced overall performance and reliability
Commercial Applications: Title: Advanced Semiconductor Device for Power Electronics This technology can be utilized in various commercial applications such as power supplies, electric vehicles, renewable energy systems, and industrial automation.
Questions about the technology: 1. How does the striped pattern formed by the first portions of the trenches contribute to the device's performance? 2. What advantages does the diode electrode configuration offer in terms of functionality and reliability?
Original Abstract Submitted
A semiconductor device, including: a drift layer of a first conductivity type provided in a semiconductor base; a base layer of a second conductivity type provided in the semiconductor base at a front surface side thereof; a plurality of first trenches provided in the semiconductor base at a front surface side thereof, and having a plurality of first portions extending in a first direction to form a striped pattern; a second trench provided in the semiconductor base at a front surface side thereof, and having a plurality of second portions extending parallel to the first portions; a plurality of gate electrodes respectively provided in the first trenches; and a diode electrode provided in the second trench. The diode electrode includes: a plurality of inner electrodes provided in the second portions, and an outer electrode connecting the inner electrodes and surrounding ends of the first portions in a plan view.
