18647260. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Shahaji B. More of Hsinchu (TW)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18647260 titled 'SEMICONDUCTOR DEVICES

The embodiment device described in the abstract includes first and second fins protruding from an isolation region, with fin spacers on the sidewalls of the fins, epitaxial source/drain regions, and varying spacer heights and widths.

  • The device features first and second fins protruding from an isolation region.
  • Fin spacers are present on the sidewalls of the fins, with varying spacer heights.
  • Epitaxial source/drain regions are located on the fin spacers and in the fins.
  • The epitaxial source/drain regions have different widths, with the first width greater than the second width.

Potential Applications: - This technology could be used in semiconductor devices for improved performance. - It may find applications in the development of advanced integrated circuits.

Problems Solved: - Enhances the efficiency and functionality of semiconductor devices. - Allows for more precise control over the source/drain regions in the device.

Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced precision in the fabrication process.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could have significant implications in the semiconductor industry, leading to the development of more advanced and efficient integrated circuits. Companies involved in semiconductor manufacturing could benefit from incorporating this technology into their production processes.

Questions about the technology: 1. How does the varying spacer heights and widths impact the performance of the semiconductor device? 

  - The varying spacer heights and widths allow for more precise control over the source/drain regions, leading to improved performance and efficiency.

2. What are the potential challenges in implementing this technology on a larger scale? 

  - Implementing this technology on a larger scale may require adjustments to existing fabrication processes and equipment to ensure consistent and reliable results.


Original Abstract Submitted

An embodiment device includes: first fins protruding from an isolation region; second fins protruding from the isolation region; a first fin spacer on a first sidewall of one of the first fins, the first fin spacer disposed on the isolation region, the first fin spacer having a first spacer height; a second fin spacer on a second sidewall of one of the second fins, the second fin spacer disposed on the isolation region, the second fin spacer having a second spacer height, the first spacer height greater than the second spacer height; a first epitaxial source/drain region on the first fin spacer and in the first fins, the first epitaxial source/drain region having a first width; and a second epitaxial source/drain region on the second fin spacer and in the second fins, the second epitaxial source/drain region having a second width, the first width greater than the second width.

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