18638771. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
AHREUM Kim of Hwaseong-si (KR)
SUNGHOON Kim of Seongnam-si (KR)
DAESEOK Byeon of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18638771 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate with an N-well area, a PMOS transistor with active regions in the N-well area, and an NMOS transistor with active regions in the substrate. The NMOS transistor has an N-type active region overlapping both the substrate and the N-well area.
- The semiconductor device features a PMOS transistor and an NMOS transistor with active regions in different areas of the substrate.
- The NMOS transistor includes an N-type active region that overlaps both the substrate and the N-well area.
- The device is designed to optimize the performance of both the PMOS and NMOS transistors in a compact space.
- By strategically placing the active regions, the device can achieve efficient operation and improved functionality.
- The technology aims to enhance the overall performance and reliability of semiconductor devices.
Potential Applications: - Integrated circuits - Microprocessors - Memory devices
Problems Solved: - Efficient utilization of space in semiconductor devices - Optimization of transistor performance - Enhanced functionality and reliability
Benefits: - Improved performance of semiconductor devices - Compact design for space-saving applications - Enhanced functionality and reliability
Commercial Applications: Title: Semiconductor Device with Optimized Transistor Performance This technology can be applied in various commercial products such as smartphones, tablets, laptops, and other electronic devices that require high-performance semiconductor components. The compact design and improved functionality make it ideal for use in consumer electronics, industrial applications, and automotive systems.
Questions about the technology: 1. How does the placement of active regions in different areas of the substrate impact the performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass-produced electronic devices?
Frequently Updated Research: Researchers are constantly exploring new ways to optimize semiconductor devices for better performance and efficiency. Stay updated on the latest advancements in semiconductor technology to leverage the benefits of this innovative approach.
Original Abstract Submitted
A semiconductor device includes a substrate, an N-well area formed in the substrate, a first P-channel metal oxide semiconductor (PMOS) transistor having active regions formed in the N-well area, and a first N-channel metal oxide semiconductor (NMOS) transistor having active regions formed in the substrate. The first NMOS transistor includes a first N-type active region overlapping each of the substrate and the N-well area, when viewed from above a plane parallel to a top surface of the substrate.
