18637489. AMPLIFIER MODULES WITH POWER TRANSISTOR DIE AND PERIPHERAL GROUND CONNECTIONS simplified abstract (NXP USA, Inc.)
Contents
AMPLIFIER MODULES WITH POWER TRANSISTOR DIE AND PERIPHERAL GROUND CONNECTIONS
Organization Name
Inventor(s)
Elie A. Maalouf of Mesa AZ (US)
Eduard Jan Pabst of Mesa AZ (US)
AMPLIFIER MODULES WITH POWER TRANSISTOR DIE AND PERIPHERAL GROUND CONNECTIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18637489 titled 'AMPLIFIER MODULES WITH POWER TRANSISTOR DIE AND PERIPHERAL GROUND CONNECTIONS
The abstract of this patent application describes a power amplifier module consisting of a module substrate, a power transistor die, and a heat spreader. The power transistor die is integrated with the module substrate and the heat spreader to efficiently dissipate heat generated during operation.
- The module substrate features three module pads exposed at a mounting surface.
- The power transistor die includes an input/output surface facing the mounting surface, with input and output pads electrically coupled to the module pads.
- The power transistor die is a field effect transistor with a gate terminal, a drain terminal, and a source terminal.
- The heat spreader is physically and electrically coupled to the ground surface of the power transistor die to facilitate heat dissipation.
- An electrical ground contact structure connects the heat spreader to the module substrate.
Potential Applications: - This technology can be used in high-power applications such as RF amplifiers, radar systems, and communication equipment. - It can also be applied in industrial equipment, medical devices, and automotive systems that require efficient power amplification.
Problems Solved: - Efficient heat dissipation in power amplifier modules. - Improved reliability and performance of power transistor dies. - Enhanced thermal management in high-power applications.
Benefits: - Increased power handling capability. - Extended lifespan of power amplifier modules. - Enhanced overall system performance and reliability.
Commercial Applications: Title: High-Power RF Amplifier Modules for Communication Systems This technology can be commercialized in the telecommunications industry for the development of high-power RF amplifier modules used in base stations, satellite communication systems, and wireless networks.
Questions about Power Amplifier Module Technology: 1. How does the integration of the heat spreader improve the performance of the power amplifier module? - The heat spreader helps dissipate heat efficiently, preventing overheating and ensuring optimal performance of the power amplifier module.
2. What are the key advantages of using a field effect transistor as the power transistor in this module? - Field effect transistors offer high power efficiency, low noise, and fast switching speeds, making them ideal for power amplifier applications.
Original Abstract Submitted
A power amplifier module includes a module substrate, a power transistor die, and a heat spreader. The module substrate has first, second, and third module pads exposed at a mounting surface. The power transistor die has an input/output surface that faces the mounting surface, an opposed ground surface, an input pad electrically coupled to the first module pad, an output pad electrically coupled to the second module pad, and an integrated power transistor. In an embodiment, the power transistor is a field effect transistor with a gate terminal coupled to the input pad, a drain terminal coupled to the output pad, and a source terminal coupled to the ground surface. The heat spreader has a thermal contact surface that is physically and electrically coupled to the ground surface of the power transistor die. An electrical ground contact structure is connected between the thermal contact surface and the third module pad.
