18636248. LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE LIGHT EMITTING ELEMENT simplified abstract (Samsung Display Co., LTD.)
LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE LIGHT EMITTING ELEMENT
Organization Name
Inventor(s)
Chang Hee Lee of Yongin-si (KR)
Sang Ho Jeon of Yongin-si (KR)
LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE LIGHT EMITTING ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18636248 titled 'LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE LIGHT EMITTING ELEMENT
The abstract describes a patent application for a light emitting element that includes a light emitting stack pattern and an insulating film with a zinc oxide (ZnO) thin film layer.
- The light emitting element consists of a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence.
- An insulating film surrounds the outer surface of at least one of the semiconductor layers, including a zinc oxide (ZnO) thin film layer.
Potential Applications:
- LED lighting technology
- Display screens
- Optoelectronic devices
Problems Solved:
- Improved efficiency of light emitting elements
- Enhanced durability and stability of the device
Benefits:
- Higher performance in light emission
- Longer lifespan of the device
- Reduced energy consumption
Commercial Applications:
- LED lighting industry
- Consumer electronics market
- Automotive lighting sector
Questions about the technology: 1. How does the inclusion of a zinc oxide (ZnO) thin film layer impact the performance of the light emitting element? 2. What are the potential cost implications of integrating this technology into commercial products?
Original Abstract Submitted
A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.
