18635869. SELF-CALIBRATION IN A MEMORY DEVICE (Micron Technology, Inc.)
Contents
SELF-CALIBRATION IN A MEMORY DEVICE
Organization Name
Inventor(s)
Jennifer E. Taylor of Boise ID (US)
Eric J. Stave of Meridian ID (US)
Timothy M. Hollis of Meridian ID (US)
Chulkyu Lee of Meridian ID (US)
Chris Gregory Holub of Bath PA (US)
SELF-CALIBRATION IN A MEMORY DEVICE
This abstract first appeared for US patent application 18635869 titled 'SELF-CALIBRATION IN A MEMORY DEVICE
Original Abstract Submitted
Systems and methods include receiving data bits at an input pin of a semiconductor device from a host device. The received data is latched in latch circuitries of the semiconductor device that at least partially implements an equalizer to aid in interpreting the received data bits. A first latched bit latched from the first received bit of the received bits is transmitted from the latch circuitries to self-calibration circuitry. The first received bit is also latched in error evaluation circuitry as a second latched bit. The second latched bit is transmitted from the error evaluation circuitry to the self-calibration circuitry. The self-calibration circuitry determines settings for the equalizer without involving the host device in determining the settings after the host device sends the data bits.
