18630164. INTERCONNECTION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

From WikiPatents
Jump to navigation Jump to search

INTERCONNECTION STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Po-Kuan Ho of Taipei City (TW)

Chia-Tien Wu of Taichung City (TW)

INTERCONNECTION STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18630164 titled 'INTERCONNECTION STRUCTURE

The method described in the abstract involves the creation of a semiconductor structure with a dielectric layer containing an opening that exposes a metal layer's top surface.

  • A bottom via is selectively deposited in the opening and over the metal layer.
  • A barrier layer is deposited over the bottom via, in contact with the dielectric layer at the opening's sidewall.
  • A top via is formed in the opening, in contact with the barrier layer, and over the bottom via.
  • The top via is separated from the dielectric layer by the barrier layer.

Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry

Problems Solved: - Enhancing the performance of semiconductor devices - Improving the reliability of integrated circuits - Facilitating the production of complex electronic systems

Benefits: - Increased efficiency in semiconductor processing - Enhanced electrical connectivity in devices - Greater durability and longevity of electronic components

Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Enhanced Device Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved functionality and reliability. It has significant implications for the semiconductor industry, enabling the development of cutting-edge products with superior performance characteristics.

Questions about the technology: 1. How does the barrier layer contribute to the overall functionality of the semiconductor structure? 

  The barrier layer acts as a protective shield, preventing interactions between the top via and the dielectric layer, ensuring the device's integrity and longevity.

2. What are the key advantages of using bottom and top vias in semiconductor structures? 

  Bottom and top vias enable efficient electrical connections between different layers of the semiconductor structure, enhancing device performance and functionality.


Original Abstract Submitted

A method includes providing a semiconductor structure including a dielectric layer having an opening exposing a top surface of a metal layer. A bottom via is selectively deposited in the opening and over the metal layer. A barrier layer is deposited over the bottom via and in contact with the dielectric layer at a sidewall of the opening. A top via is formed in the opening, in contact with the barrier layer, and over the bottom via. The top via is separated from the dielectric layer by the barrier layer.

Retrieved from "http://wikipatents.org/index.php?title=18630164._INTERCONNECTION_STRUCTURE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=218951"